9
FN6229.1
November 24, 2008
ground. This same capacitor combination should be placed
at each supply pin to ground if split supplies are to be used.
Power Dissipation Considerations
Specifying continuous data rates, driver loads and driver
level amplitudes are key in determining power supply
requirements as well as dissipation/cooling necessities.
Driver Output patterns also impact these needs. The faster
the pin activity, the greater the need to supply current and
remove heat.
Figures 17 and 18 address power consumption relative to
frequency of operation. These graphs are based on driving
6.0/0.0V out into a 1k
Ω load. Theta JA for the device
package is 23.0, 16.6 and 14.9°C/W based on Airflows of 0,
1 and 2.5 meters per second. The device is mounted per
speed data rate capability of the ISL55100B, it is possible to
exceed the +150°C “ absolute maximum junction
temperature” as operating conditions and frequencies
increase. Therefore, it is important to calculate the maximum
junction temperature for the application to determine if
operating conditions need to be modified for the device to
remain in the safe operating area.
The maximum power dissipation allowed in a package is
determined according to Equation 1:
where:
TJMAX = Maximum junction temperature
TAMAX = Maximum ambient temperature
θJA = Thermal resistance of the package
PDMAX = Maximum power dissipation in the package
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads.
Power also depends on number of channels changing state,
frequency of operation. The extent of continuous active
pattern generation/reception will greatly effect dissipation
requirements.
The power dissipation curves (Figure 17), provide a way to
see if the device will overheat. The maximum safe power
temperature vs operating frequency can be found
graphically in Figure 18. This graph is based on the package
type Theta JA ratings and actual current/wattage
requirements of the ISL55100B when driving a 1k load with a
6V High Level and a 0V Low Rail. The temperatures are
indicated as calculated junction temperature over the
ambient temperature of the user’s system. Plots indicate
temperature change as operating frequency increases (the
graph assumes continuous operation). The user should
evaluate various heat sink/cooling options in order to control
the ambient temperature part of the equation. This is
especially true if the users applications require continuous,
high speed operation.
The reader is cautioned against assuming the same level of
thermal performance in actual applications. A careful
inspection of conditions in your application should be
conducted. Great care must be taken to ensure Die
Temperature does not exceed the +150°C Absolute
Maximum Thermal Limits.
Important Note: The ISL55100B package metal plane is
used for heat sinking of the device. It is electrically
connected to the negative supply potential (VEE). If VEE
is tied to ground, the thermal pad can be connected to
ground. Otherwise, the thermal pad (VEE) must be
isolated from other power planes.
Power Supply Sequencing
The ISL55100B references every supply with respect to
VEE. Therefore apply VEE, then VCC followed by the VH,VL
busses, then the COMP High and Comp Low followed by the
CVA and CVB Supplies. Digital Inputs should be set with a
differential bias as soon as possible. In cases where VEXT is
being utilized (VEXT = VEE + 5.5V), it should be powered up
immediately after VCC. Basically, no pin should be biased
above VCC or below VEE.
Data Rates
Please note that the Frequency (MHz) in Figures 17 and 18
contain two transitions within each period. A digital
application that requires a new test pattern every 50ns would
be running at a 20MHz Data Rate. Figure 19 reveals 100ns
period, in 10MHz frequency parlance, results in two 50ns
digital patterns.
ESD Protection
Figure 6 is the block diagram depicting the ESD protection
networks and the VOH upper FET body diode.
P
DMAX
T
JMAX - TAMAX
Θ
JA
---------------------------------------------
=
(EQ. 1)
ISL55100B
相关PDF资料
ISL5627INZ IC DAC DUAL 8BIT 3.3V 48-LQFP
ISL5629/2INZ IC DAC 8BIT CMOS DUAL 48LQFP
ISL5727INZ IC DAC DUAL 10BIT 3.3V 48-LQFP
ISL5729/2INZ IC DAC 10BIT CMOS DUAL 48LQFP
ISL5757IBZ IC DAC 10BIT 260MHZ 28-SOIC
ISL5761/2IBZ CONV D/A 10BIT HS LP 28-SOIC
ISL5827INZ IC DAC DUAL 12BIT 3.3V 48-LQFP
ISL5857IAZ IC DAC 12-BIT 260MSPS 28-TSSOP
相关代理商/技术参数
ISL55100BIRZ-T 功能描述:IC COMP DRVR/WINDOW 18V 72-QFN RoHS:是 类别:集成电路 (IC) >> 接口 - 驱动器,接收器,收发器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 类型:发射器 驱动器/接收器数:4/0 规程:RS422,RS485 电源电压:4.75 V ~ 5.25 V 安装类型:表面贴装 封装/外壳:16-SOIC(0.154",3.90mm 宽) 供应商设备封装:16-SOIC 包装:带卷 (TR)
ISL55110 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual, High Speed MOSFET Driver
ISL55110_0712 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual, High Speed MOSFET Driver
ISL55110_11 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual, High Speed MOSFET Driver
ISL55110EVAL1Z 功能描述:电源管理IC开发工具 ISL59532IKEZ32X32VID CROSPNT SNGL END IN RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
ISL55110EVAL2Z 功能描述:电源管理IC开发工具 ISL59534IKEZ32X16VID CROSPNT SNGL END IN RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
ISL55110IRZ 功能描述:功率驱动器IC W/ANNEAL ULTRASOUND DRVR 16LD 4X4 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
ISL55110IRZ-T 功能描述:功率驱动器IC W/ANNEAL ULTRASOUND DRVR 16LD 4X4 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube